Ohmic contact formation of metal/amorphous-Ge/n-Ge junctions with an anomalous modulation of Schottky barrier height

Date:2022-03-11 clicks:

Journal:Applied Physics Letters

Correspondence Author:CSY

Co-author:LX

Indexed by:Article

Volume:105

Issue:19

Translation or Not:no

Date of Publication:2014-11-10

Pre One:Interfacial nitrogen stabilizes carbon-coated mesoporous silicon particle anodes Next One:High (111) orientation poly-Ge film fabricated by Al induced crystallization without the introduction of AlOx interlayer