Hits:

Affilication of Author(s):萨本栋微米纳米科学技术研究院

Patent Applicant:朱佩,LMP,崔千,黄海宁

Type of Patent:发明专利

State of Patent:专利申请

Authorization number:201511027493.9

Service Invention or Not:no

First Author:LX

Pre One:一种制备石墨烯和二氧化钛复合材料的制备方法 Next One:一种基于石墨烯多孔膜的离子浓差极化芯片及其制备方法