张勇
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发表刊物:Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics
第一作者:张勇
论文类型:Journal article (JA)
卷号:28
期号:4
页面范围:479-482
是否译文:否
发表时间:2007-11-02
上一条:Morphological evolution of SiGe films covered with and without native oxide during vacuum thermal annealing
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