张勇
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发表刊物:Solid-State Electronics
第一作者:张勇
论文类型:Article
通讯作者:李成
卷号:52
期号:11
页面范围:1782-1790
是否译文:否
发表时间:2007-11-01
上一条:Thermal annealing effects on a compositionally graded SiGe layer fabricated by oxidizing a strained SiGe layer
下一条:Morphological evolution of SiGe films covered with and without native oxide during vacuum thermal annealing