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李鑫

Patents

一种基于石墨烯多孔膜的离子浓差极化芯片及其制备方法

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Affilication of Author(s):萨本栋微米纳米科学技术研究院

Scope of patent:国内

Patent Applicant:何翔,肖代琴,CH,黄海宁,LX

Type of Patent:发明专利

State of Patent:专利申请,专利公开,专利授权,预申请

Application Number:201710171940.0

Authorization number:201710171940.0

Service Invention or Not:yes

First Author:LX