厦门大学平台管理系统 WM--Home-- Strain mediated ultra-high electron mobility in Ge-doped two-dimensional Ga<sub>2</sub>O<sub>3</sub>

Language : English

吴猛

Home

Scientific Research: Research Field; Paper Publications; Patents; Published Books; Research Projects

Teaching Research: Teaching Resources; Teaching Information; Teaching Achievement

Awards and Honours

Enrollment Information

Student Information

My Album

Blog

MOBILE Version

Paper Publications

Current position: Home > Scientific Research > Paper Publications

Strain mediated ultra-high electron mobility in Ge-doped two-dimensional Ga<sub>2</sub>O<sub>3</sub>

Hits:

Journal:AIP ADVANCES

Correspondence Author:WM

Indexed by:Article

Volume:14

Issue:8

Translation or Not:no

Date of Publication:2024-08-01

Pre One:High Electron Mobility in Si-Doped Two-Dimensional β-Ga2O3 Tuned Using Biaxial Strain Next One:Ultra-high electron mobility in Sn-doped two-dimensional Ga<sub>2</sub>O<sub>3</sub> modified by biaxial strain and electric field