厦门大学平台管理系统 WM--Home-- Strain mediated ultra-high electron mobility in Ge-doped two-dimensional Ga<sub>2</sub>O<sub>3</sub>

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Strain mediated ultra-high electron mobility in Ge-doped two-dimensional Ga<sub>2</sub>O<sub>3</sub>

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Journal:AIP ADVANCES

Indexed by:Article

Correspondence Author:WM

Volume:14

Issue:8

Translation or Not:no

Date of Publication:2024-08-01

Pre One:High Electron Mobility in Si-Doped Two-Dimensional β-Ga2O3 Tuned Using Biaxial Strain Next One:Ultra-high electron mobility in Sn-doped two-dimensional Ga<sub>2</sub>O<sub>3</sub> modified by biaxial strain and electric field