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[1]WM.High Electron Mobility in Si-Doped Two-Dimensional β-Ga2O3 Tuned Using Biaxial Strain.Materials,2023,17(16):
[2]WM,Strain mediated ultra-high electron mobility in Ge-doped two-dimensional Ga<sub>2</sub>O<sub>3</sub>.AIP ADVANCES,2024,14(8):
[3]WM,Ultra-high electron mobility in Sn-doped two-dimensional Ga<sub>2</sub>O<sub>3</sub> modified by biaxial strain and electric field.APPLIED PHYSICS EXPRESS,2024,17(8):
[4]SYF,WM.Deciphering Absolute O <i>2p</i> Position as a Practical Descriptor for Strain-Dependent Perovskite Nickelate Electrocatalysts.Advanced Functional Materials,
[5]WM,ZHL,Ferromagnetic Insulating Ground-State Resolved in Mixed Protons and Oxygen Vacancies-Doped La<sub>0.67</sub>Sr<sub>0.33</sub>CoO<sub>3</sub> Thin Films via Ionic Liquid Gating.ACS APPLIED MATERIALS & INTERFACES,2024,
[6]WM,Reinforced concrete-like Na3.5V1.5Mn0.5(PO4)3 @graphene hybrids with hierarchical porosity as durable and high-rate sodium-ion battery cathode.CHINESE CHEMICAL LETTERS,2023,35(4):
[7]WM,Influences of cation distribution on proton insertion dynamics in complex spinel NiCo2O4 thin films via ionic liquid gating.Physical Review Materials,2022,7(7):
[8]WM.Role of Native Defects in Fe-Doped β-Ga<sub>2</sub>O<sub>3</sub>.Materials,2022,16(20):
[9]WM,Effects of Cu, Zn Doping on the Structural, Electronic, and Optical Properties of α-Ga<sub>2</sub>O<sub>3</sub>: First-Principles Calculations.MATERIALS,2022,16(15):
[10]WM,X-ray magnetic circular dichroism and anomalous Hall effect in proton-doped spinel NiCo2O4 thin films.Physical Review B,2023,107(24):
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