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YANG WEIFENG
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教授
- 电子邮箱：0ffdc14dca75126efb899abda591a963377576b7fdaddd3a4498ef298df5f0c4a2abf5548951fe4290970614d8b94b632ebd7c2ec3f717a34916761ec5a06c9222d835e2aa62bcc48e443866c35a1f452b6d40e738f47db3932339ac36a3fe44eba6e5759733048430300485e483759d4460ba58f44060af87630dd36ca759f6
- 所在单位：电子科学与技术学院（国家示范性微电子学院）
访问量：
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[11]YANG WEIFENG.Lowering the Schottky Barrier Height by Quasi-van der Waals Contacts for High-Performance p-Type MoTe<sub>2</sub> Field-Effect Transistors.ACS Applied Materials and Interfaces,16(18):23752-23760.
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[12]YANG WEIFENG,Energy band alignment of 2D/3D MoS2/4H-SiC heterostructure modulated by multiple interfacial interactions.FRONTIERS OF PHYSICS,2022,18(1):
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[13]YANG WEIFENG,Interfacial properties of 2D WS2 on SiO2 substrate from X-ray photoelectron spectroscopy and first-principles calculations.FRONTIERS OF PHYSICS,2021,17(5):
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[14]YANG WEIFENG.Interfacial properties of 2DWS2on SiO2substrate from x-ray photoelectron spectroscopy and first-principles calculations.arXiv,2022,
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[15]YANG WEIFENG.Threshold voltage modulation in monolayer MoS2 field-effect transistors via selective gallium ion beam irradiation.Science China Materials,
