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李煦
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副教授
- 入职时间：2018-01-05
- 所在单位：物理科学与技术学院
- 学历：博士研究生毕业
- 办公地点：物理楼 402
- 性别：男
- 学位：哲学博士学位
- 在职信息：在职
访问量：
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[11]李煦.High-efficient and gate-tunable spin transport in GaN thin film at room temperature.Applied Physics Letters,2023,122(18):
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[12]李煦.Controlling the resistive switching polarity in ReS<sub>2</sub> lateral memristors through the modulation of crystal structures.Applied Physics Express,2022,16(4):
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[13]吴雅苹,吴志明,李煦.Layer-dependent dielectric modulation in WS2/GaN heterostructures.Physical Review B,2023,107(8):
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[14]李煦,吴雅苹,吴志明,李书平,Nonvolatile Electrical Valley Manipulation in WS2 by Ferroelectric Gating.ACS Nano,
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[15]吴雅苹,吴志明,李煦.Modulation of Valley Dynamics in Hybrid H/T Phase Monolayer WSe2.Laser and Photonics Reviews,
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[16]李煦,吴雅苹,吴志明,Modulating the intralayer and interlayer valley excitons in WS2 through interaction with AlGaN.SCIENCE CHINA-MATERIALS,2021,
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[17]李煦,吴雅苹,吴志明,High-Efficient Spin Injection in GaN at Room Temperature Through A Van der Waals Tunnelling Barrier.Nanoscale Research Letters,17(1):
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[18]李煦,吴雅苹,吴志明,Direct synthesis of moire superlattice through chemical vapor deposition growth of monolayer WS2 on plasma-treated HOPG.Nano Research,
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[19]李煦.Improvement of Interfacial Properties of 4H-SiC/SiO2by Nitrogen Plasma Treatment.2021 18th China International Forum on Solid State Lighting and 2021 7th International Forum on Wide Bandgap Semiconductors, SSLChina: IFWS 2021,13-16.
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[20]吴志明,吴雅苹,李煦.Enormous Valley Splitting in Monolayer WS2 by Coupling with an N-Terminated GaN Substrate.PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS,2020,15(4):
