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YANG WEIFENG,A trench beside field limiting rings terminal for improved 4H-SiC junction barrier Schottky diodes: Proposal and investigation.Microelectronics Reliability,2023,160
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YANG WEIFENG,Simultaneous electric dipoles and flat-band voltage modulation in 4H-SiC MOS capacitors through HfO<sub>2</sub>/SiO<sub>2</sub> interface engineering.JOURNAL OF PHYSICS D-APPLIED PHYSICS,2024,57(37):
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ZJ,YANG WEIFENG.Gallium-incorporated TiO<sub>2</sub> thin films by atomic layer deposition for future electronic devices.FRONTIERS IN MATERIALS,2024,11
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YANG WEIFENG,High-Performance β-Ga<sub>2</sub>O<sub>3</sub> MISIM Solar-Blind Photodetectors With an Interfacial AlN Layer.IEEE PHOTONICS TECHNOLOGY LETTERS,2024,36(9):593-596.
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YANG WEIFENG,High-Responsivity Self-Powered Solar-Blind Photodetectors Based on Magnetron-Sputtered CuCrO<sub>2</sub>/β-Ga<sub>2</sub>O<sub>3</sub> p-n Heterojunction.IEEE TRANSACTIONS ON ELECTRON DEVICES,2024,1-5.
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YANG WEIFENG.Synergistically Modulating Conductive Filaments in Ion-Based Memristors for Enhanced Analog In-Memory Computing.Advanced Science,
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YANG WEIFENG.High-Performance 8 x 8 4H-SiC-Based MISIM Photodetector Arrays for UV Imaging.IEEE Photonics Technology Letters,2024,36(4):239-242.
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厦大-深圳市清宝科技有限公司保密协议,在研,深圳市清宝科技有限公司,YANG WEIFENG,
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保密协议-厦门新镓能半导体科技有限公司 -厦门大学,在研,厦门新镓能半导体科技有限公司,YANG WEIFENG,
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关于建立“厦门大学电子科学与技术学院-厦门新镓能半导体科技有限公司车规级氮化镓功率芯片联合研发中心”合同,在研,厦门新镓能半导体科技有限公司,YANG WEIFENG,YANG WEIFENG,许帅航,李成超,詹鸿儒,张捷
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一种含稀土栅介质层的平面型 SiC MOSFET及其制造方法等四项专利申请权转让,已结题,杭州合盛微电子有限公司,YANG WEIFENG,
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常关型氧化镓基异质结场效应晶体管研究,在研,YANG WEIFENG,YANG WEIFENG,洪荣墩,梅洋,帅浩,陈衍晖,许锐,范绍升,陈文澄,苏童
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关于建立“厦门大学电子科学与技术学院─厦门磐晟电气设备有限公司电力电子技术研发中心”合同,已结题,厦门磐晟电气设备有限公司,YANG WEIFENG,YANG WEIFENG,帅浩
