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YANG WEIFENG
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[1]YANG WEIFENG,A trench beside field limiting rings terminal for improved 4H-SiC junction barrier Schottky diodes: Proposal and investigation.Microelectronics Reliability,2023,160
[2]YANG WEIFENG,Simultaneous electric dipoles and flat-band voltage modulation in 4H-SiC MOS capacitors through HfO<sub>2</sub>/SiO<sub>2</sub> interface engineering.JOURNAL OF PHYSICS D-APPLIED PHYSICS,2024,57(37):
[3]ZJ,YANG WEIFENG.Gallium-incorporated TiO<sub>2</sub> thin films by atomic layer deposition for future electronic devices.FRONTIERS IN MATERIALS,2024,11
[4]YANG WEIFENG,High-Performance β-Ga<sub>2</sub>O<sub>3</sub> MISIM Solar-Blind Photodetectors With an Interfacial AlN Layer.IEEE PHOTONICS TECHNOLOGY LETTERS,2024,36(9):593-596.
[5]YANG WEIFENG,High-Responsivity Self-Powered Solar-Blind Photodetectors Based on Magnetron-Sputtered CuCrO<sub>2</sub>/β-Ga<sub>2</sub>O<sub>3</sub> p-n Heterojunction.IEEE TRANSACTIONS ON ELECTRON DEVICES,2024,1-5.
[6]YANG WEIFENG.Synergistically Modulating Conductive Filaments in Ion-Based Memristors for Enhanced Analog In-Memory Computing.Advanced Science,
[7]YANG WEIFENG.High-Performance 8 x 8 4H-SiC-Based MISIM Photodetector Arrays for UV Imaging.IEEE Photonics Technology Letters,2024,36(4):239-242.
[8]YANG WEIFENG.Fluorine Anion-Doped Ultra-Thin InGaO Transistors Overcoming Mobility-Stability Trade-off.Technical Digest - International Electron Devices Meeting, IEDM,
[9]YANG WEIFENG.Effect of Oxygen Precursors on Growth Mechanism in High-Quality β-Ga<sub>2</sub>O<sub>3</sub> Epilayers on Sapphire by Molecular Beam Epitaxy and Related Solar-Blind Photodetectors.IEEE Sensors Journal,24(9):1-1.
[10]YANG WEIFENG.Improved β-Ga 2 O 3 Schottky Barrier Diodes via thermal oxidation of titanium insertion layer.Micro and Nanostructures,2023,190
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