厦门大学平台管理系统 YANG WEIFENG--Home--Paper Publications

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[11]YANG WEIFENG.Lowering the Schottky Barrier Height by Quasi-van der Waals Contacts for High-Performance p-Type MoTe<sub>2</sub> Field-Effect Transistors.ACS Applied Materials and Interfaces,16(18):23752-23760.
[12]YANG WEIFENG,Energy band alignment of 2D/3D MoS2/4H-SiC heterostructure modulated by multiple interfacial interactions.FRONTIERS OF PHYSICS,2022,18(1):
[13]YANG WEIFENG,Interfacial properties of 2D WS2 on SiO2 substrate from X-ray photoelectron spectroscopy and first-principles calculations.FRONTIERS OF PHYSICS,2021,17(5):
[14]YANG WEIFENG.Interfacial properties of 2DWS2on SiO2substrate from x-ray photoelectron spectroscopy and first-principles calculations.arXiv,2022,
[15]YANG WEIFENG.Threshold voltage modulation in monolayer MoS2 field-effect transistors via selective gallium ion beam irradiation.Science China Materials,

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