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Paper Publications

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Lowering the Schottky Barrier Height by Quasi-van der Waals Contacts for High-Performance p-Type MoTe<sub>2</sub> Field-Effect Transistors

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Journal:ACS Applied Materials and Interfaces

Co-author:YANG WEIFENG

Indexed by:Article

Volume:16

Issue:18

Page Number:23752-23760

Translation or Not:no