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Journal:FRONTIERS OF PHYSICS

Correspondence Author:YANG WEIFENG

Indexed by:Article

Volume:18

Issue:1

Translation or Not:no

Date of Publication:2022-12-02

Pre One:Lowering the Schottky Barrier Height by Quasi-van der Waals Contacts for High-Performance p-Type MoTe₂ Field-Effect Transistors Next One:Interfacial properties of 2D WS2 on SiO2 substrate from X-ray photoelectron spectroscopy and first-principles calculations